Peripheral operating requirements and behaviors
Table 11. Flash and EEPROM characteristics
(continued)
C
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
C
Characteristic
NVM Bus frequency
Symbol
Min1
Typical2
Max3
25
Unit4
MHz
MHz
tcyc
fNVMBUS
fNVMOP
tVFYALL
tRD1BLK
tRD1BLK
tRD1SEC
tDRD1SEC
tRDONCE
tPGM2
1
—
NVM Operating frequency
Erase Verify All Blocks
Erase Verify Flash Block
Erase Verify EEPROM Block
Erase Verify Flash Section
Erase Verify EEPROM Section
Read Once
0.8
1
1.05
17338
16913
810
—
—
—
—
tcyc
—
—
tcyc
—
—
484
tcyc
—
—
555
tcyc
—
—
450
tcyc
Program Flash (2 word)
Program Flash (4 word)
Program Once
0.12
0.20
0.20
0.10
0.17
0.25
0.32
96.01
95.98
19.10
4.81
96.01
—
0.12
0.21
0.21
0.10
0.18
0.26
0.33
100.78
100.75
20.05
5.05
100.78
—
0.29
0.46
0.21
0.27
0.43
0.60
0.77
101.49
101.44
20.08
20.57
101.48
464
ms
tPGM4
ms
tPGMONCE
tDPGM1
tDPGM2
tDPGM3
tDPGM4
tERSALL
tERSBLK
tERSPG
tDERSPG
tUNSECU
tVFYKEY
tMLOADU
nFLPE
ms
Program EEPROM (1 Byte)
Program EEPROM (2 Byte)
Program EEPROM (3 Byte)
Program EEPROM (4 Byte)
Erase All Blocks
ms
ms
ms
ms
ms
Erase Flash Block
ms
Erase Flash Sector
ms
Erase EEPROM Sector
Unsecure Flash
ms
ms
Verify Backdoor Access Key
Set User Margin Level
tcyc
—
—
407
tcyc
FLASH Program/erase endurance TL to
TH = -40 °C to 105 °C
10 k
100 k
—
Cycles
C
C
EEPROM Program/erase endurance TL
to TH = -40 °C to 105 °C
nFLPE
tD_ret
50 k
15
500 k
100
—
—
Cycles
years
Data retention at an average junction
temperature of TJavg = 85°C after up to
10,000 program/erase cycles
1. Minimum times are based on maximum fNVMOP and maximum fNVMBUS
2. Typical times are based on typical fNVMOP and maximum fNVMBUS
3. Maximum times are based on typical fNVMOP and typical fNVMBUS plus aging
4. tcyc = 1 / fNVMBUS
Program and erase operations do not require any special power sources other than the
normal VDD supply. For more detailed information about program/erase operations, see
the Flash Memory Module section in the reference manual.
KE02 Sub-Family Data Sheet, Rev3, 07/2013.
Freescale Semiconductor, Inc.
23