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MKE02Z64VQH2 参数 Datasheet PDF下载

MKE02Z64VQH2图片预览
型号: MKE02Z64VQH2
PDF下载: 下载PDF文件 查看货源
内容描述: 经营特色:闪存的写入电压范围: 2.7〜 5.5 V [Operating characteristics : Flash write voltage range: 2.7 to 5.5 V]
分类和应用: 闪存
文件页数/大小: 36 页 / 1459 K
品牌: FREESCALE [ Freescale ]
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Peripheral operating requirements and behaviors  
Table 11. Flash and EEPROM characteristics  
(continued)  
C
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
C
Characteristic  
NVM Bus frequency  
Symbol  
Min1  
Typical2  
Max3  
25  
Unit4  
MHz  
MHz  
tcyc  
fNVMBUS  
fNVMOP  
tVFYALL  
tRD1BLK  
tRD1BLK  
tRD1SEC  
tDRD1SEC  
tRDONCE  
tPGM2  
1
NVM Operating frequency  
Erase Verify All Blocks  
Erase Verify Flash Block  
Erase Verify EEPROM Block  
Erase Verify Flash Section  
Erase Verify EEPROM Section  
Read Once  
0.8  
1
1.05  
17338  
16913  
810  
tcyc  
tcyc  
484  
tcyc  
555  
tcyc  
450  
tcyc  
Program Flash (2 word)  
Program Flash (4 word)  
Program Once  
0.12  
0.20  
0.20  
0.10  
0.17  
0.25  
0.32  
96.01  
95.98  
19.10  
4.81  
96.01  
0.12  
0.21  
0.21  
0.10  
0.18  
0.26  
0.33  
100.78  
100.75  
20.05  
5.05  
100.78  
0.29  
0.46  
0.21  
0.27  
0.43  
0.60  
0.77  
101.49  
101.44  
20.08  
20.57  
101.48  
464  
ms  
tPGM4  
ms  
tPGMONCE  
tDPGM1  
tDPGM2  
tDPGM3  
tDPGM4  
tERSALL  
tERSBLK  
tERSPG  
tDERSPG  
tUNSECU  
tVFYKEY  
tMLOADU  
nFLPE  
ms  
Program EEPROM (1 Byte)  
Program EEPROM (2 Byte)  
Program EEPROM (3 Byte)  
Program EEPROM (4 Byte)  
Erase All Blocks  
ms  
ms  
ms  
ms  
ms  
Erase Flash Block  
ms  
Erase Flash Sector  
ms  
Erase EEPROM Sector  
Unsecure Flash  
ms  
ms  
Verify Backdoor Access Key  
Set User Margin Level  
tcyc  
407  
tcyc  
FLASH Program/erase endurance TL to  
TH = -40 °C to 105 °C  
10 k  
100 k  
Cycles  
C
C
EEPROM Program/erase endurance TL  
to TH = -40 °C to 105 °C  
nFLPE  
tD_ret  
50 k  
15  
500 k  
100  
Cycles  
years  
Data retention at an average junction  
temperature of TJavg = 85°C after up to  
10,000 program/erase cycles  
1. Minimum times are based on maximum fNVMOP and maximum fNVMBUS  
2. Typical times are based on typical fNVMOP and maximum fNVMBUS  
3. Maximum times are based on typical fNVMOP and typical fNVMBUS plus aging  
4. tcyc = 1 / fNVMBUS  
Program and erase operations do not require any special power sources other than the  
normal VDD supply. For more detailed information about program/erase operations, see  
the Flash Memory Module section in the reference manual.  
KE02 Sub-Family Data Sheet, Rev3, 07/2013.  
Freescale Semiconductor, Inc.  
23