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MKE02Z64VQH2 参数 Datasheet PDF下载

MKE02Z64VQH2图片预览
型号: MKE02Z64VQH2
PDF下载: 下载PDF文件 查看货源
内容描述: 经营特色:闪存的写入电压范围: 2.7〜 5.5 V [Operating characteristics : Flash write voltage range: 2.7 to 5.5 V]
分类和应用: 闪存
文件页数/大小: 36 页 / 1459 K
品牌: FREESCALE [ Freescale ]
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Peripheral operating requirements and behaviors  
Table 10. OSC and ICS specifications (temperature range = -40 to 105 °C ambient)  
(continued)  
Num  
C
Characteristic  
Symbol  
Min  
Typical1  
Max  
Unit  
13  
C
Long term jitter of DCO output clock  
(averaged over 2 ms interval)8  
CJitter  
0.02  
0.2  
%fdco  
1. Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.  
2. When ICS is configured for FEE or FBE mode, input clock source must be divisible using RDIV to within the range of 31.25  
kHz to 39.0625 kHz.  
3. See crystal or resonator manufacturer's recommendation.  
4. Load capacitors (C1,C2), feedback resistor (RF) and series resistor (RS) are incorporated internally when RANGE = HGO =  
0.  
5. This parameter is characterized and not tested on each device.  
6. Proper PC board layout procedures must be followed to achieve specifications.  
7. This specification applies to any time the FLL reference source or reference divider is changed, trim value changed,  
DMX32 bit is changed, DRS bit is changed, or changing from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE,  
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.  
8. Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum fBus  
.
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise  
injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage  
for a given interval.  
OSC  
EXTAL  
XTAL  
RS  
RF  
Crystal or Resonator  
C1  
C2  
Figure 15. Typical crystal or resonator circuit  
6.3 NVM specifications  
This section provides details about program/erase times and program/erase endurance for  
the flash and EEPROM memories.  
Table 11. Flash and EEPROM characteristics  
C
Characteristic  
Symbol  
Min1  
Typical2  
Max3  
Unit4  
D
Supply voltage for program/erase –40  
°C to 105 °C  
Vprog/erase  
2.7  
5.5  
V
D
Supply voltage for read operation  
VRead  
2.7  
5.5  
V
Table continues on the next page...  
KE02 Sub-Family Data Sheet, Rev3, 07/2013.  
22  
Freescale Semiconductor, Inc.  
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