ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40°C ≤ TC ≤ 125°C, and calibrated
timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =
25°C.
Characteristic
DIGITAL INTERFACE (CONTINUED)
Symbol
Min
Typ
Max
Unit
Input Logic Pull-down Current
0.8 to 5.0 V (SI)
I
μA
μA
SI_PD
5.0
-30
15
25
Input Logic Pull-up Current on OUT_EN
I
OUT_EN_PU
OUT_EN = 0.0 V, V
= 5.0 V
-50
-100
DD
OUT_EN Leakage Current to VDD
OUT_EN = 5.0 V, V = 0 V
I
μA
μA
OUT_EN(LKG)
–
5
–
50
25
DD
SCLK Pull-down Current
I
SCLK
VSCLK = V
DD
15
Tri-state SO Output
0 to 5.0 V
I
μA
μA
TRISO
-10
-50
–
–
10
50
CS Input Current
CS = VDD
I
CS
CS Pull-up Current
CS = 0 V
I
μA
μA
CS_PU
-30
-50
-100
CS Leakage Current to VDD
CS = 5.0 V, V = 0 V
I
CS(LKG)
–
–
–
50
–
DD
SO Input Capacitance in Tri-state Mode
SO High State Output Voltage
C
20
pF
V
SO
V
SO_HIGH
I
= -1.0 mA
V
- 0.4
–
–
–
SO-HIGH
DD
SO Low State Output Voltage
= 1.0 mA
V
V
μA
V
SO_LOW
I
–
0.4
100
SO-LOW
NOMI, MAXI in V10 Mode Pull-down Current
NOMI, MAXI = 0.8 V V = 5.0 V
I
PD
30
70
,
DD
SPKDUR Output Voltage
V
SPKDUR_LO
I
= 1.0 mA
–
–
0.4
SPKDUR
Output Pull-up Current for SPKDUR
I
30
50
100
μA
SPKDUR_PV
NOMI, MAXI High State Output Voltage
V
V
I_HIGH
I
I
= -1.0 mA
= -1.0 mA
V
- 0.4
–
–
–
NOMI-HIGH
MAXI-HIGH
DD
NOMI, MAXI Low State Output Voltage
V
V
I_LOW
I
I
= 250 µA
= 250 µA
–
0.4
NOMI-LOW
MAXI-LOW
33810
Analog Integrated Circuit Device Data
Freescale Semiconductor
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