Electrical Characteristics
2.5
ESD Protection
1, 2
Table 13. ESD Protection Characteristics
Characteristics
Symbol
Value
Units
ESD target for Human Body Model
ESD target for Machine Model
HBM circuit description
HBM
MM
2000
200
1500
100
0
V
V
Rseries
C
Rseries
C
Ω
pF
Ω
MM circuit description
200
pF
—
Number of pulses per pin (HBM)
• Positive pulses
• Negative pulses
—
—
1
1
Number of pulses per pin (MM)
• Positive pulses
• Negative pulses
—
—
—
3
3
Interval of pulses
—
1
sec
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
2.6
DC Electrical Specifications
1
Table 14. DC Electrical Specifications
Characteristic
Symbol
Min
Max
Unit
Supply voltage
VDD
VSTBY
VIH
3.0
3.0
3.6
3.5
V
V
Standby voltage
Input high voltage
Input low voltage
Input hysteresis
0.7 × VDD
VSS – 0.3
0.06 × VDD
2.15
4.0
V
VIL
0.35 × VDD
—
V
VHYS
VLVD
VLVDHYS
Iin
mV
V
Low-voltage detect trip voltage (VDD falling)
Low-voltage detect hysteresis (VDD rising)
Input leakage current
2.3
60
120
mV
μA
–1.0
1.0
Vin = VDD or VSS, digital pins
Output high voltage (all input/output and all output pins)
IOH = –2.0 mA
VOH
VDD – 0.5
—
—
V
V
Output low voltage (all input/output and all output pins)
IOL = 2.0mA
VOL
0.5
MCF52259 ColdFire Microcontroller, Rev. 0
Freescale Semiconductor
33
FREESCALE [ Freescale ]
