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ATC700B102FT50XT 参数 Datasheet PDF下载

ATC700B102FT50XT图片预览
型号: ATC700B102FT50XT
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET [RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 13 页 / 863 K
品牌: FREESCALE [ Freescale ]
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TYPICAL CHARACTERISTICS — CW  
24  
23  
60  
55  
50  
22  
21  
20  
19  
45  
40  
G
ps  
35  
30  
25  
20  
15  
10  
18  
17  
16  
η
D
V
= 50 Vdc  
= 10 mA  
DD  
I
DQ  
f = 1300 MHz  
= 25°C  
15  
14  
T
C
10  
100  
, OUTPUT POWER (WATTS) CW  
400  
P
out  
Figure 9. CW Power Gain and Drain Efficiency versus Output Power  
60  
55  
25  
24  
23  
10 mA  
100 mA  
I
= 700 mA  
DQ  
50  
45  
40  
350 mA  
500 mA  
500 mA  
350 mA  
22  
21  
20  
19  
18  
I
= 700 mA  
DQ  
35  
30  
25  
100 mA  
10 mA  
V
= 50 Vdc  
V
= 50 Vdc  
DD  
DD  
20  
15  
10  
f = 1300 MHz  
= 25°C  
f = 1300 MHz  
T = 25°C  
C
17  
16  
T
C
10  
100  
, OUTPUT POWER (WATTS) CW  
400  
10  
100  
, OUTPUT POWER (WATTS) CW  
400  
P
P
out  
out  
Figure 11. CW Efficiency versus Output Power  
Figure 10. CW Power Gain versus Output Power  
9
10  
8
10  
7
10  
6
10  
5
10  
4
10  
90  
110  
130  
150  
170  
190  
210  
230  
250  
T , JUNCTION TEMPERATURE (°C)  
J
This above graph displays calculated MTTF in hours when the device  
is operated at V = 50 Vdc, P = 230 W CW, and η = 55%.  
DD  
out  
D
MTTF calculator available at http://www.freescale.com/rf. Select  
Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
Figure 12. MTTF versus Junction Temperature — CW  
MRF6V13250HR3 MRF6V13250HSR3  
RF Device Data  
Freescale Semiconductor  
6
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