TYPICAL CHARACTERISTICS — PULSED
1000
100
10
60
V
= 50 Vdc, I = 100 mA, f = 1300 MHz
DQ
DD
Ideal
Pulse Width = 200 μsec, Duty Cycle = 10%
59
58
57
C
iss
P3dB = 55.4 dBm
(345 W)
C
oss
P2dB = 55.1 dBm
(326 W)
56
55
P1dB = 54.7 dBm
(293 W)
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
Actual
V
GS
C
rss
54
53
1
0
10
20
30
40
50
30
31
32
33
34
35
36
37
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (dBm) PULSED
in
DS
Figure 3. Capacitance versus Drain--Source Voltage
Figure 4. Pulsed Output Power versus
Input Power
24
23
70
60
25
23
V
= 50 Vdc, I = 100 mA, f = 1300 MHz
DQ
DD
Pulse Width = 200 μsec Duty Cycle = 10%
21
19
22
21
50
40
V
= 50 V
DD
45 V
G
ps
40 V
30
20
17
20
19
35 V
200
30 V
150
15
13
11
η
D
I
= 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
DQ
25 V
10
0
18
17
Duty Cycle = 10%
20 V
100
1
10
100
500
0
50
250
300
350
400
P
, OUTPUT POWER (WATTS) PULSED
P , OUTPUT POWER (WATTS) PULSED
out
out
Figure 6. Pulsed Power Gain versus
Output Power
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
24
23
70
70
-- 3 0 _C
V
= 50 Vdc
= 100 mA
DD
V
= 50 V
DD
45 V
I
DQ
40 V
60
50
60
50
35 V
f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
G
ps
30 V
22
21
20
19
25 V
40
30
20 V
85_C
25_C
40
30
20
10
T
= --30_C
C
η
D
20
25_C
I
= 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
DQ
10
0
18
17
Duty Cycle = 10%
85_C
3
10
100
500
0
50
100
150
200
250
300
350
400
P
, OUTPUT POWER (WATTS) PULSED
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 7. Pulsed Efficiency versus
Output Power
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
5
FREESCALE [ Freescale ]
