Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
120
—
—
—
—
—
1
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 50 mA)
V
—
10
20
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 640 μAdc)
V
V
1.0
2.0
0.1
1.8
2.4
2.7
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.58 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.2
58
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
340
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.), f = 1300 MHz
DD
DQ
out
Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
21.5
53.5
—
22.7
57.0
-- 1 8
24.0
—
dB
%
ps
D
Drain Efficiency
η
Input Return Loss
IRL
-- 9
dB
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 10 mA, P = 230 W CW, f = 1300 MHz, T = 25°C
DD
DQ
out
C
Power Gain
G
—
21.0
55.0
-- 1 7
—
—
—
dB
%
ps
Drain Efficiency
Input Return Loss
η
—
—
D
IRL
dB
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.),
DD
DQ
out
f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles
Ψ
No Degradation in Output Power
1. Part internally input matched.
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
2