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ATC700B102FT50XT 参数 Datasheet PDF下载

ATC700B102FT50XT图片预览
型号: ATC700B102FT50XT
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET [RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 13 页 / 863 K
品牌: FREESCALE [ Freescale ]
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Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2 (Minimum)  
B (Minimum)  
IV (Minimum)  
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Gate--Source Leakage Current  
I
120  
1
μAdc  
Vdc  
GSS  
(V = 5 Vdc, V = 0 Vdc)  
GS  
DS  
Drain--Source Breakdown Voltage  
(V = 0 Vdc, I = 50 mA)  
V
10  
20  
(BR)DSS  
GS  
D
Zero Gate Voltage Drain Leakage Current  
(V = 50 Vdc, V = 0 Vdc)  
I
μAdc  
μAdc  
DSS  
DSS  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
I
(V = 90 Vdc, V = 0 Vdc)  
DS  
GS  
On Characteristics  
Gate Threshold Voltage  
(V = 10 Vdc, I = 640 μAdc)  
V
V
1.0  
2.0  
0.1  
1.8  
2.4  
2.7  
3.0  
0.3  
Vdc  
Vdc  
Vdc  
GS(th)  
GS(Q)  
DS(on)  
DS  
D
Gate Quiescent Voltage  
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)  
DD  
D
Drain--Source On--Voltage  
(V = 10 Vdc, I = 1.58 Adc)  
V
0.25  
GS  
D
(1)  
Dynamic Characteristics  
Reverse Transfer Capacitance  
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
1.2  
58  
pF  
pF  
pF  
rss  
GS  
Output Capacitance  
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
oss  
GS  
Input Capacitance  
C
340  
iss  
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)  
DS  
GS  
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.), f = 1300 MHz  
DD  
DQ  
out  
Pulsed, 200 μsec Pulse Width, 10% Duty Cycle  
Power Gain  
G
21.5  
53.5  
22.7  
57.0  
-- 1 8  
24.0  
dB  
%
ps  
D
Drain Efficiency  
η
Input Return Loss  
IRL  
-- 9  
dB  
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 10 mA, P = 230 W CW, f = 1300 MHz, T = 25°C  
DD  
DQ  
out  
C
Power Gain  
G
21.0  
55.0  
-- 1 7  
dB  
%
ps  
Drain Efficiency  
Input Return Loss  
η
D
IRL  
dB  
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.),  
DD  
DQ  
out  
f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle  
VSWR 10:1 at all Phase Angles  
Ψ
No Degradation in Output Power  
1. Part internally input matched.  
MRF6V13250HR3 MRF6V13250HSR3  
RF Device Data  
Freescale Semiconductor  
2
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