Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 90 mA, I
DQ2
= 420 mA,
P
out
= 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB
@ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
P
out
@ 1 dB Compression Point, CW
Video Bandwidth @ 40 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 4 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 40 W CW
Average Group Delay @ P
out
= 40 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 40 W CW,
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
G
ps
PAE
ACPR
IRL
P1dB
VBW
—
10
—
28
12
—
—
—
30
14
- 50
- 16
40
33
—
- 46
- 12
—
dB
%
dBc
dB
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 90 mA, I
DQ2
= 420 mA, 2110 - 2170 MHz
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.1
1.08
1.98
18.3
0.05
0.004
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
4
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
