Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-0.5, +5
32, +0
-65 to +150
150
Unit
Vdc
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
T
°C
C
(1,2)
T
225
°C
J
P
20
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
JC
°C/W
4 W Avg.
(P = 3.95 W Avg., Case Temperature = 68°C) Stage 1, 28 Vdc, I
= 90 mA
= 420 mA
3.9
1.3
out
DQ1
DQ2
Stage 2, 28 Vdc, I
40 W Avg.
(P = 39.4 W Avg., Case Temperature = 80°C) Stage 1, 28 Vdc, I
= 90 mA
= 420 mA
3.2
1.2
out
DQ1
DQ2
Stage 2, 28 Vdc, I
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1. Continuous use at maximum temperature will affect MTTF.
1B (Minimum)
A (Minimum)
II (Minimum)
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
2
FREESCALE [ Freescale ]
