TYPICAL CHARACTERISTICS
−10
−20
−30
−10
V
= 28 Vdc, I
= 420 mA
f1 = 2135 MHz, f2 = 2145 MHz
V
= 28 Vdc, I
= 90 mA
f1 = 2135 MHz, f2 = 2145 MHz
DD
DQ2
DD
DQ1
−20 Two−Tone Measurements, 10 MHz Tone Spacing
Two−Tone Measurements, 10 MHz Tone Spacing
I
= 210 mA
630 mA
DQ2
I
= 45 mA
−30
−40
−50
−60
DQ1
315 mA
67.5 mA
−40
−50
−60
525 mA
135 mA
112.5 mA
90 mA
135 mA
1
10
, OUTPUT POWER (WATTS) PEP
100
1
10
P , OUTPUT POWER (WATTS) PEP
out
100
P
out
Figure 9. Third Order Intermodulation Distortion
versus Output Power @ IDQ1 = 90 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power @ IDQ2 = 420 mA
−10
−20
−10
V
= 28 Vdc, P = 40 W (PEP), I
= 90 mA
DD
out
DQ1
= 420 mA, Two−Tone Measurements
V
= 28 Vdc, I = 90 mA
= 420 mA, f1 = 2135 MHz, f2 = 2145 MHz
DD
DQ1
I
DQ2
(f1 + f2)/2 = Center Frequency of 2140 MHz
I
DQ2
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
−50
−60
IM3−U
IM3−L
−30
−40
−50
−60
IM5−U
3rd Order
5th Order
IM5−L
IM7−U
IM7−L
7th Order
10
1
100
1
10
100
P
, OUTPUT POWER (WATTS) PEP
out
TWO−TONE SPACING (MHz)
Figure 11. Intermodulation Distortion
Products versus Output Power
Figure 12. Intermodulation Distortion
Products versus Tone Spacing
38
36
34
32
30
28
26
24
22
20
54
53
52
50
45
40
35
Ideal
−30_C
P6dB = 47.77 dBm (59.84 W)
G
ps
T = −30_C
C
25_C
85_C
P3dB = 57.22 dBm (52.76 W)
51
50
49
48
47
46
45
44
43
25_C
P1dB = 46.23 dBm (42 W)
30
25
85_C
Actual
20
15
V
I
= 28 Vdc
= 90 mA
= 420 mA
DD
V
= 28 Vdc, I
= 90 mA, I
= 420 mA
DQ1
DQ2
DD
DQ1
DQ2
PAE
I
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2140 MHz
10
5
f = 2140 MHz
11 12 13
14 15 16
17 18 19
20 21 22
1
10
, OUTPUT POWER (WATTS) CW
out
100
P , INPUT POWER (dBm)
in
P
Figure 13. Pulsed CW Output Power versus
Input Power
Figure 14. Power Gain and Power Added
Efficiency versus CW Output Power
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
8
FREESCALE [ Freescale ]
