Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
1
GS
DS
Stage 1 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 23 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 90 mAdc)
2.9
13
DD
D
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 90 mAdc, Measured in Functional Test)
V
9.5
16.5
DD
D
(1)
Stage 1 — Dynamic Characteristics
Input Capacitance
C
iss
—
50
—
pF
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
I
DS
GS
Gate-Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
7
2
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 150 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 420 mAdc)
2.8
9.8
0.39
DD
D
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 420 mAdc, Measured in Functional Test)
V
12.5
1.2
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1 Adc)
V
0.2
GS
D
(1)
Stage 2 — Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
0.67
205
—
—
pF
pF
rss
GS
Output Capacitance
C
oss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
1. Part internally matched both on input and output.
(continued)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
3
FREESCALE [ Freescale ]
