Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
= 1500 mA, f = 2140 MHz
DQ
VSWR 10:1 at 32 Vdc, 269 W CW Output Power
(3 dB Input Overdrive from 182 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1500 mA, 2110--2170 MHz Bandwidth
DD
DQ
(1)
P
@ 1 dB Compression Point, CW
P1dB
—
—
182
—
—
W
out
AM/PM
Φ
--19.3
°
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
AFT21S230S
VBW
—
—
MHz
res
95
60
AFT21S232S
Gain Flatness in 60 MHz Bandwidth @ P = 50 W Avg.
G
—
—
0.5
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.016
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
∆P1dB
—
0.007
—
dB/°C
(1)
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
3