Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
°C
(1,2)
Operating Junction Temperature Range
T
J
°C
CW Operation @ T = 25°C
CW
163
W
C
Derate above 25°C
0.79
W/°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 80°C, 50 W CW, 28 Vdc, I = 1500 mA, 2110 MHz
0.43
0.38
DQ
(4)
Case Temperature 86°C, 140 W CW , 28 Vdc, I = 1500 mA, 2110 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 291 μAdc)
V
V
1.5
2.2
0.1
2.0
2.7
0.2
2.5
3.2
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1500 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
V
(V = 10 Vdc, I = 3.7 Adc)
GS
D
(5)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1500 mA, P = 50 W Avg., f = 2110 MHz,
DD DQ out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
16.0
29.0
6.7
—
16.7
30.5
7.2
19.0
—
dB
%
ps
D
Drain Efficiency
η
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
--35.7
-- 1 9
--34.0
-- 1 0
—
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
2
FREESCALE [ Freescale ]
