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AFT21S230SR3 参数 Datasheet PDF下载

AFT21S230SR3图片预览
型号: AFT21S230SR3
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率LDMOS晶体管N - 沟道增强 - 模式横向的MOSFET [RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管
文件页数/大小: 15 页 / 559 K
品牌: FREESCALE [ Freescale ]
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V
= 28 Vdc, I = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle  
DQ  
DD  
Max Output Power  
P1dB  
P3dB  
Max  
Linear  
Gain (dB)  
(1)  
η
AM/PM  
(°)  
η
AM/PM  
f
Z
Z
in  
Z
load  
D
D
source  
(%)  
55.4  
55.1  
54.7  
(%)  
57.0  
56.0  
56.0  
(°)  
(MHz)  
()  
()  
()  
(dBm)  
54.3  
(W)  
269  
269  
269  
(dBm)  
55.2  
(W)  
331  
331  
331  
2110  
2140  
2170  
1.20 - j6.00  
1.70 - j6.40  
1.70 - j6.80  
1.20 + j5.90  
1.50 + j6.30  
1.75 + j6.70  
1.50 - j3.90  
1.60 - j4.00  
1.50 - j4.00  
17.7  
17.7  
17.8  
11  
10  
11  
16  
15  
16  
54.3  
55.2  
54.3  
55.2  
(1) Load impedance for optimum P1dB power.  
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.  
= Impedance as measured from gate contact to ground.  
= Measured impedance presented to the output of the device at the package reference plane.  
source  
in  
load  
Input Load Pull  
Tuner and Test  
Circuit  
Output Load Pull  
Tuner and Test  
Circuit  
Device  
Under  
Test  
Z
Z
in  
Z
load  
source  
Figure 9. Load Pull Performance — Maximum P1dB Tuning  
V
= 28 Vdc, I = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle  
DQ  
DD  
Max Drain Efficiency  
P1dB  
P3dB  
Max  
Linear  
(1)  
η
AM/PM  
η
AM/PM  
f
Z
Z
in  
Z
load  
D
D
source  
(%)  
64.9  
64.2  
64.2  
(°)  
16  
16  
17  
(%)  
66.2  
65.4  
65.5  
(°)  
(MHz)  
()  
()  
()  
(dBm)  
52.7  
(W)  
186  
191  
191  
(dBm)  
54.3  
(W)  
269  
219  
263  
Gain (dB)  
2110  
2140  
2170  
1.20 - j6.00  
1.70 - j6.40  
1.70 - j6.80  
1.20 + j5.93  
1.40 + j6.30  
1.80 + j6.80  
2.10 - j2.41  
1.80 - j2.60  
1.70 - j2.60  
20.0  
19.8  
20.0  
20  
24  
22  
52.8  
53.4  
52.8  
54.2  
(1) Load impedance for optimum P1dB efficiency.  
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.  
= Impedance as measured from gate contact to ground.  
= Measured impedance presented to the output of the device at the package reference plane.  
source  
in  
load  
Input Load Pull  
Tuner and Test  
Circuit  
Output Load Pull  
Tuner and Test  
Circuit  
Device  
Under  
Test  
Z
Z
in  
Z
load  
source  
Figure 10. Load Pull Performance — Maximum Drain Efficiency Tuning  
AFT21S230SR3 AFT21S232SR3  
RF Device Data  
Freescale Semiconductor, Inc.  
7
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