V
= 28 Vdc, I = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DQ
DD
Max Output Power
P1dB
P3dB
Max
Linear
Gain (dB)
(1)
η
AM/PM
(°)
η
AM/PM
f
Z
Z
in
Z
load
D
D
source
(%)
55.4
55.1
54.7
(%)
57.0
56.0
56.0
(°)
(MHz)
(Ω)
(Ω)
(Ω)
(dBm)
54.3
(W)
269
269
269
(dBm)
55.2
(W)
331
331
331
2110
2140
2170
1.20 - j6.00
1.70 - j6.40
1.70 - j6.80
1.20 + j5.90
1.50 + j6.30
1.75 + j6.70
1.50 - j3.90
1.60 - j4.00
1.50 - j4.00
17.7
17.7
17.8
11
10
11
16
15
16
54.3
55.2
54.3
55.2
(1) Load impedance for optimum P1dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
Figure 9. Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DQ
DD
Max Drain Efficiency
P1dB
P3dB
Max
Linear
(1)
η
AM/PM
η
AM/PM
f
Z
Z
in
Z
load
D
D
source
(%)
64.9
64.2
64.2
(°)
16
16
17
(%)
66.2
65.4
65.5
(°)
(MHz)
(Ω)
(Ω)
(Ω)
(dBm)
52.7
(W)
186
191
191
(dBm)
54.3
(W)
269
219
263
Gain (dB)
2110
2140
2170
1.20 - j6.00
1.70 - j6.40
1.70 - j6.80
1.20 + j5.93
1.40 + j6.30
1.80 + j6.80
2.10 - j2.41
1.80 - j2.60
1.70 - j2.60
20.0
19.8
20.0
20
24
22
52.8
53.4
52.8
54.2
(1) Load impedance for optimum P1dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
Figure 10. Load Pull Performance — Maximum Drain Efficiency Tuning
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
7