ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 3.1 V ≤ VDD ≤ 5.5 V, 5.5 V ≤ VPWR ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING
Output Slew Rate Low Side Configuration(11)
= 620Ω, CL = 200pF
tSR(RISE)
tSR(FALL)
tSR(RISE)
tSR(FALL)
V/μs
V/μs
V/μs
V/μs
R
0.1
0.1
0.1
0.1
1.0
0.5
0.5
0.3
0.3
15
1.0
1.0
1.0
1.0
50
LOAD
Output Slew Rate Low Side Configuration(11)
= 620 Ω, CL = 200 pF
R
LOAD
Output Rise Time High Side Configuration(11)
= 620 Ω, CL = 200 pF
R
LOAD
Output Fall Time High Side Configuration(11)
= 620 Ω, CL = 200 pF
R
LOAD
Output Turn ON Delay Time, High Side and Low Side Configuration(12)
tDLY(ON)
tDLY(OFF)
tFAULT
μs
μs
Output Turn OFF Delay Time, High Side and Low Side Configuration(12)
1.0
30
–
100
300
Output Fault Delay Time(13)
Power-ON Reset Delay
100
μs
μs
t
POR
Delay Time Required from Rising Edge of EN and V
to SPI Active
100
100
–
–
–
–
DD
Low-State Duration on V
or EN for Reset
t
µs
DD
RESET
V
or EN ≤ 0.2 V
DD
Notes
11. Output slew rate respectively measured across a 620 Ω resistive load at 10 to 90 percent and 90 to 10 percent voltage points.
CL capacitor is connected from Drain or Source output to Ground.
12. Output turn ON and OFF delay time measured from 50 percent rising edge of CS to the beginning of the 10 and 90 percent transition
points.
13. Duration of fault before fault bit is set. Duration between access times must be greater than 300 μs to read faults.
33879
Analog Integrated Circuit Device Data
10
Freescale Semiconductor