ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
ELECTRICAL RATINGS
Supply Voltage
V
PWR
V
DD
CS,
SI, SO, SCLK, EN, DEFAULT, PWMx, P1, P3, P5, P7
Symbol
Value
Unit
V
DC
V
PWR
V
DD
–
V
DSNS
E
CLAMP
-1.5 to 45
-0.3 to 7.0
-0.3 to V
DD
-0.3 to 60
30
V
DC
V
DC
mJ
Predriver Drain Voltage (VDSNS1 to VDSNS6)
OSS Output Clamp Energy (OUT3 to OUT8)(Single Pulse)
T
Junction
= 150°C, I
OUT
= 0.45A
OSS Output Clamp Energy (OUT1 & OUT2)(Single Pulse)
T
Junction
= 150°C, I
OUT
= 0.45A
CCD1 Output Clamp Energy (Single Pulse)
T
Junction
= 150°C, I
OUT
= 0.45A
CCD2 Output Clamp Energy (Single Pulse)
T
Junction
= 150°C, I
OUT
= 0.45A
OSS Output Continuous Current (OUT1 to OUT8 Steady State)
T
Junction
= 150°C
CCD1 Output Clamp Energy (CCD1_REC OUTPUT)
T
Junction
= 150°C, I
OUT
= 1.0 A
Frequency of SPI Operation (V
DD
= 5.0V)
(3)
ESD Voltage
(1)
Human Body Model
Machine Model
THERMAL RATINGS
Storage Temperature
Operating Case Temperature
Operating Junction Temperature
Power Dissipation (T
A
= 25
°
C)
(2)
THERMAL RESISTANCE
Thermal Resistance
Junction to Ambient
Between the Die and the Exposed Die Pad
E
CLAMP
45
mJ
E
CLAMP
75
mJ
E
CLAMP
25
mJ
I
OSS_SS
350
mA
E
CLAMP
75
mJ
–
V
ESD1
V
ESD2
4.0
±2000
±200
MHz
V
T
STG
T
C
T
J
P
D
-55 to 150
-40 to 125
-40 to 150
1.7
°
C
°
C
°
C
W
R
θ
JA
R
θ
JC
71
1.2
°
C/W
Notes
1. ESD data available upon request. All pins tested individually. ESD1 testing is performed in accordance with the Human Body Model
(AEC-Q100-002). and the Machine Model (AEC-Q100-003).
2. Maximum power dissipation at T
J
=150
°
C junction temperature with no heat sink used.
3.
This parameter is guaranteed by design but is not production tested.
33800
6
Analog Integrated Circuit Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
