ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage
VPWR
VDC
VPWR
VDD
-1.5 to 45
-0.3 to 7.0
VDD
CS, SI, SO, SCLK, EN, DEFAULT, PWMx, P1, P3, P5, P7
Predriver Drain Voltage (VDSNS1 to VDSNS6)
–
-0.3 to VDD
-0.3 to 60
30
VDC
VDC
mJ
VDSNS
OSS Output Clamp Energy (OUT3 to OUT8)(Single Pulse)
TJunction = 150°C, IOUT = 0.45A
E
E
E
E
CLAMP
CLAMP
CLAMP
CLAMP
OSS Output Clamp Energy (OUT1 & OUT2)(Single Pulse)
TJunction = 150°C, IOUT = 0.45A
45
75
mJ
mJ
mJ
mA
mJ
CCD1 Output Clamp Energy (Single Pulse)
TJunction = 150°C, IOUT = 0.45A
CCD2 Output Clamp Energy (Single Pulse)
TJunction = 150°C, IOUT = 0.45A
25
OSS Output Continuous Current (OUT1 to OUT8 Steady State)
TJunction = 150°C
IOSS_SS
350
75
CCD1 Output Clamp Energy (CCD1_REC OUTPUT)
TJunction = 150°C, IOUT = 1.0 A
E
CLAMP
–
Frequency of SPI Operation (VDD = 5.0V)(3)
4.0
MHz
V
ESD Voltage(1)
VESD1
VESD2
±2000
±200
Human Body Model
Machine Model
THERMAL RATINGS
Storage Temperature
T
-55 to 150
-40 to 125
-40 to 150
1.7
°C
°C
°C
W
STG
Operating Case Temperature
Operating Junction Temperature
Power Dissipation (TA = 25°C)(2)
THERMAL RESISTANCE
TC
TJ
PD
Thermal Resistance
R
71
Junction to Ambient
θJA
°C/W
R
1.2
Between the Die and the Exposed Die Pad
θJC
Notes
1. ESD data available upon request. All pins tested individually. ESD1 testing is performed in accordance with the Human Body Model
(AEC-Q100-002). and the Machine Model (AEC-Q100-003).
2. Maximum power dissipation at TJ =150°C junction temperature with no heat sink used.
3. This parameter is guaranteed by design but is not production tested.
33800
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
FREESCALE [ Freescale ]
