ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 3.0V ≤ VDD ≤ 5.5V, 9.0V ≤ VPWR ≤ 18V, -40°C ≤ TA ≤ 125°C, GND = 0V, unless
otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless
otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SPI DIGITAL INTERFACE (SO, SI, CS, SCLK) (CONTINUED)
Sleep Mode EN and DEFAULT Input Current
I
µA
µA
LOGICSS
LOGICPD
V
= 0.0V, V = 5.0V, V
= 5.0V
D E FA U LT
-10
–
10
D D
EN
Normal Mode Input Logic Pull-down Current(9)
0.8V to 5.0V
I
5.0
15
–
25
Normal Mode DEFAULT Pull-up Current
IDEFAULTPU
-5.0
-25
µA
µA
SCLK, Tri-state SO Output
0.0V to 5.0V
ISCLK, ITRISO
-10
-10
–
–
10
10
CS Input Current
CS = VDD
I
µA
CS
CS Pull-up Current
CS = 0.0V
I
µA
µA
CSPU
-5.0
–
–
–
-30
10
CS Leakage Current to VDD
I
CS(LKG)
CS = 5.0V, V
= 0.0V
DD
SO High-state Output Voltage
= -1.0mA
V
V
V
SOHIGH
I
V
- 0.4
–
–
SOHIGH
DD
SO Low-state Output Voltage
= 1.0mA
V
SOLOW
I
–
–
0.4
SOLOW
IENPD
10
50
100
µA
EN Input Pull-down Current
EN = VDD
PREDRIVER OUTPUT FUNCTION (GD1 - GD6)
Gate Drive Output Voltage
IGATEDRIVE = 100µA
IGATEDRIVE = - 100µA
VGS(ON)
VGS(OFF)
5.0
–
7.0
0.2
9.0
0.5
V
Gate Drive Sink and Source Current
Sleep Mode Gate to Source Resistor
Short Fault Detection Voltage Threshold
IGATEDRIVE
RGS(PULLDOWN)
VDS(FLTTH)
–
2.0
5.0
mA
KΩ
V
65
200
300
V
= High, Outputs Programmed ON
-20%
+20%
3.0
DD
Programmable from 0.5V to 3.0V in 0.5V increments.
Open Fault Detection Voltage Threshold
VDS(FLTTH)
V
V
= High, Outputs Programmed OFF
2.0
2.5
DD
Notes
9. Parameter applies to P1, P3, P5, P7, PWM1 to PWM6, SI and VCAL, and are guaranteed by design.
33800
Analog Integrated Circuit Device Data
Freescale Semiconductor
10
FREESCALE [ Freescale ]
