ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 3.0V ≤ VDD ≤ 5.5V, 9.0V ≤ VPWR ≤ 18V, -40°C ≤ TA ≤ 125°C, GND = 0V, unless
otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless
otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
PREDRIVER OUTPUT FUNCTION (GD1 - GD6)
Open Fault Detection Filter Timer(18)
VDS(FLTTH)
µs
µs
V
= High, Outputs Programmed OFF
100
128
400
DD
Short Fault Detection Filter Timer(18)
= High, Outputs Programmed ON
tDS(FLTTMR)
V
-10%
+10%
DD
Programmable from 30µs to 960µs in replicating increments.
Gate Drive Rise Slew Rate
tGDSR(RISE)
tGDSR(FALL)
tPWMDELAY
tLRSR(RISE)
V/µs
V/µs
ns
Cload = 1.0nF, VGS from 0.5 to 5.0V
–
1.7
1.7
–
Gate Drive Fall Slew Rate
Cload = 1.0nF, VGS from 5.0 to 0.5V
–
–
PWM1 to PWM6 Input Propagation Delay
20
300
Measured from PWM input at 4.5V and GDx output at 0.5V.
Load Resistance Feedback Output Rise Slew Rate
CLOAD = 40pF
0.5
0.5
–
–
2.0
2.0
V/µs
Load Resistance Feedback Output Fall Slew Rate
CLOAD = 40pF
tLRSR(FALL)
V/µs
Load Resistance Sample Duration(18)
tLOADSAMPLE
tFDBKVALID
200
400
µs
Load Resistance Feedback Valid (18)
us
Time from rising edge of CS to Load Resistance measurement valid
Notes
18. Assumes oscillator has been calibrated using SPI Calibrate Command.
33800
Analog Integrated Circuit Device Data
Freescale Semiconductor
14
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