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2743019447 参数 Datasheet PDF下载

2743019447图片预览
型号: 2743019447
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强模式横向的MOSFET [N-Channel Enhancement-Mode Lateral MOSFETs]
分类和应用: PC
文件页数/大小: 15 页 / 525 K
品牌: FREESCALE [ Freescale ]
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TYPICAL CHARACTERISTICS  
−10  
10  
V
I
= 28 Vdc, P = 120 W (PEP)  
out  
= 1100 mA, TwoTone Measurements  
V
= 28 Vdc  
f1 = 465 MHz, f2 = 467.5 MHz  
DD  
DD  
DQ  
−20  
−30  
−40  
−50  
−60  
−70  
(f1 + f2)/2 = Center Frequency of 465 MHz  
TwoTone Measurements, 2.5 MHz Tone Spacing  
20  
30  
40  
50  
IM3−U  
IM3−L  
3rd Order  
IM5−L  
IM5−U  
5th Order  
IM7−U  
7th Order  
IM7−L  
60  
1
10  
100  
200 300  
1
10  
100  
TWOTONE SPACING (MHz)  
P
, OUTPUT POWER (WATTS) PEP  
out  
Figure 7. Intermodulation Distortion Products  
versus Output Power  
Figure 8. Intermodulation Distortion Products  
versus Tone Spacing  
59  
58  
Ideal  
P6dB = 52.98 dBm (198.6 W)  
57  
56  
P3dB = 52.26 dBm (168.27 W)  
55  
54  
P1dB = 51.16 dBm (130.62 W)  
53  
52  
51  
50  
49  
Actual  
= 28 Vdc, I = 1100 mA  
V
DD  
DQ  
CW  
f = 465 MHz  
24 25 26 27 28 29 30 31 32 33 34 35 36  
P , INPUT POWER (dBm)  
in  
Figure 9. Pulsed CW Output Power versus  
Input Power  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
−25  
−30  
−35  
−40  
−45  
−50  
−55  
−60  
−65  
−70  
−75  
V
= 28 Vdc, I = 1100 mA, f = 465 MHz  
DQ  
SingleCarrier N−CDMA  
DD  
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB  
@ 0.01% Probability (CCDF)  
ACPR  
G
25_C  
ps  
85_C  
T = −30_C  
C
η
D
85_C  
−30_C  
25_C  
ALT1  
−30_C  
25_C  
85_C  
0
1
10  
60  
P
, OUTPUT POWER (WATTS) AVG.  
out  
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power  
Gain and Drain Efficiency versus Output Power  
MRF5S4125NR1 MRF5S4125NBR1  
RF Device Data  
Freescale Semiconductor  
6