TYPICAL CHARACTERISTICS
−10
−10
V
I
= 28 Vdc, P = 120 W (PEP)
out
= 1100 mA, Two−Tone Measurements
V
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
DD
DD
DQ
−20
−30
−40
−50
−60
−70
(f1 + f2)/2 = Center Frequency of 465 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
−40
−50
IM3−U
IM3−L
3rd Order
IM5−L
IM5−U
5th Order
IM7−U
7th Order
IM7−L
−60
1
10
100
200 300
1
10
100
TWO−TONE SPACING (MHz)
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
59
58
Ideal
P6dB = 52.98 dBm (198.6 W)
57
56
P3dB = 52.26 dBm (168.27 W)
55
54
P1dB = 51.16 dBm (130.62 W)
53
52
51
50
49
Actual
= 28 Vdc, I = 1100 mA
V
DD
DQ
CW
f = 465 MHz
24 25 26 27 28 29 30 31 32 33 34 35 36
P , INPUT POWER (dBm)
in
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
40
35
30
25
20
15
10
5
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
V
= 28 Vdc, I = 1100 mA, f = 465 MHz
DQ
Single−Carrier N−CDMA
DD
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
ACPR
G
25_C
ps
85_C
T = −30_C
C
η
D
85_C
−30_C
25_C
ALT1
−30_C
25_C
85_C
0
1
10
60
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
6
FREESCALE [ Freescale ]
