Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
10
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 400 μAdc)
V
V
2
3
4
5
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1100 mAdc, Measured in Functional Test)
3.5
4.25
0.175
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.5 Adc)
V
0.05
0.3
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
2.41
—
—
pF
pF
rss
GS
Output Capacitance
C
oss
74.61
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1100 mA, P = 25 W Avg. N-CDMA, f = 465 MHz,
DD
DQ
out
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
22
28
—
—
23
25
—
dB
%
ps
Drain Efficiency
η
30.2
-47.6
-15
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-45
-9
dBc
dB
1. Part internally input matched.
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
2
FREESCALE [ Freescale ]
