TYPICAL CHARACTERISTICS
25
24
23
22
21
36
32
28
η
D
24
G
V
I
= 28 Vdc, P = 25 W (Avg.)
DD out
= 1100 mA, Single−Carrier N−CDMA
ps
DQ
−45
−50
−55
−60
−65
0
ACPR
−5
20
19
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−10
−15
−20
IRL
18
17
ALT1
420
430
440
450
460
470
480
490
500
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 25 Watts Avg.
25
24
52
48
44
40
23
22
21
20
19
18
17
η
D
V
I
= 28 Vdc, P = 58 W (Avg.)
out
= 1100 mA, Single−Carrier N−CDMA
DD
−20
−30
−40
−50
−60
0
G
DQ
ps
1.2288 MHz, Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−5
ACPR
IRL
−10
−15
−20
ALT1
420
430
440
450
460
470
480
490
500
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 58 Watts Avg.
25
−10
I
= 1650 mA
V
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
DQ
DD
24
23
22
21
20
19
18
1375 mA
1100 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
825 mA
I
= 550 mA
DQ
562.5 mA
550 mA
825 mA
−40
−50
V
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
DD
1375 mA
10
1100 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
200 300
1
100
200 300
P
, OUTPUT POWER (WATTS) PEP
out
P , OUTPUT POWER (WATTS) PEP
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
5
FREESCALE [ Freescale ]
