TYPICAL CHARACTERISTICS
24
90
80
70
26
25
−30_C
I = 1100 mA
DQ
f = 465 MHz
G
ps
25_C
T = −30_C
C
24
23
22
21
23
22
21
20
25_C
85_C
85_C 60
50
40
20
19
30
20
V
I
= 28 Vdc
= 1100 mA
DD
η
D
DQ
18
17
10
f = 465 MHz
V
= 24 V
32 V
200
28 V
DD
0
0
50
100
150
250
1
10
100
300
P
, OUTPUT POWER (WATTS) CW
out
P , OUTPUT POWER (WATTS) CW
out
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
9
10
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 25 W Avg., and η = 30.2%.
DD
out
D
MTTF calculator available at http:/www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
7