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CMS4A16LAF 参数 Datasheet PDF下载

CMS4A16LAF图片预览
型号: CMS4A16LAF
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 )低功耗SDRAM [128M(8Mx16) Low Power SDRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 616 K
品牌: FIDELIX [ FIDELIX ]
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CMS4A16LAx–75Ex  
Figure 1. Initialize and Load Mode Register[1.2.3.]  
10 11 12  
0
1
2
3
4
5
6
7
8
9
13 14  
15  
16  
17 18  
19  
CLK  
CKE  
/CS  
/RAS  
/CAS  
ADDR  
Key  
Key  
Key  
RAa  
RAa  
Key  
BA0  
BA1  
A10/AP  
DQ  
HiZ  
HiZ  
/WE  
DQM  
High level is necessary  
tRC  
tRP  
tRC  
Precharge  
(All Bank)  
Auto  
Refresh  
Auto  
Refresh  
Normal  
MRS  
Extended  
MRS  
Row Active  
a Bank  
Note :  
1. The two AUTO REFRESH commands at T4 and T9 may be applied before either LOAD MODE REGISTER (LMR) command.  
2. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH command, ACT = ACTIVE command, RA = Row Address, BA = Bank  
Address  
3. The Load Mode Register for both MR/EMR and 2 Auto Refresh commands can be in any order; However, all must occur prior to an Active command.  
Register Definition  
burst (sequential or interleaved), M4-M6 specify the CAS  
There are two mode registers which contain settings to  
achieve low power consumption. The two registers : Mode  
Register and Extended Mode Register are discussed below.  
latency, M7 and M8 specify the operating mode, M9 specifies  
the width burst mode, M10, M11, M12 and M13 should be set  
to zero. The mode register must be loaded when all banks are  
idle, and the controller must wait the specified time before ini-  
tiating the subsequent operation. Violating either of these  
requirements will result in unspecified operation.  
Mode Register  
The mode register is used to define the specific mode of  
operation of the SDRAM. This definition includes the selec-  
tion of a burst length, a burst type, a CAS latency, an operat-  
ing mode and a write burst mode, as shown in Table 1. The  
mode register is programmed via the LOAD MODE REGIS-  
TER command and will retain the stored information until it is  
programmed again or the device loses power. Mode Register  
bits M0-M2 specify the burst length, M3 specifies the type of  
Burst Length  
Read and write accesses to the SDRAM are burst oriented. The  
burst length is programmable, as shown in Table 2. The burst  
length determines the maximum number of column locations  
that can be accessed for a given READ or WRITE command.  
Burst lengths of 1,2, 4, or 8 locations are available for both the  
7
Rev. 0.5, May. ‘07