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CMS4A16LAF 参数 Datasheet PDF下载

CMS4A16LAF图片预览
型号: CMS4A16LAF
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 )低功耗SDRAM [128M(8Mx16) Low Power SDRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 616 K
品牌: FIDELIX [ FIDELIX ]
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CMS4A16LAx–75Ex  
Pin Description  
Symbol  
Type  
Description  
Clock : CLK is driven by the system clock. All SDRAM input signals are sampled on the positive  
edge of CLK. CLK also increments the internal burst counter and controls the output registers.  
CLK  
Input  
Clock Enable: CKE activates(HIGH) and deactivates(LOW) the CLK signal. Deactivating the  
clock provides PRECHARGE POWER-DOWN and SELF Refresh operation(all banks idle),  
ACTIVE POWER-DOWN(row active in any bank) or CLOCK SUSPEND operation(burst/access  
in progress). CKE is synchronous except after the device enters power-down and self refresh  
modes, where CKE becomes asynchronous until after exiting the same mode. The input buffers,  
including CLK, are disabled during power-down and self refresh modes, providing low standby  
power. CKE may be tied HIGH.  
CKE  
Input  
Chip Select: /CS enables (registered LOW) and disables (registered HIGH) the command  
decoder. All commands are masked when /CS is registered HIGH. /CS provides for external  
bank selection on systems with multiple banks. /CS is considered part of the command code.  
/CS  
Input  
Input  
Command Inputs : /CAS, /RAS, and /WE (along with /CS) define the command being entered.  
/CAS, /RAS, /WE  
Input/Output Mask: L(U)DQM is sampled HIGH and is an input mask signal for write accesses  
and an output disable signal for read accesses. Input data is masked during a WRITE cycle. The  
output buffers are placed in a High-Z state (two-clock latency) when during a READ cycle.  
LDQM corresponds to DQ0 – DQ7 and UDQM corresponds to DQ8–DQ15.  
LDQM, UDQM  
BA0, BA1  
Input  
Input  
Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ, WRITE or  
PRECHARGE command is being applied. These pins also provide the op-code during a LOAD  
MODE REGISTER command.  
Address Inputs: A0–A11 are sampled during the ACTIVE command (row- address A0–A11)  
and READ/WRITE command (column-address A0–A8; with A10 defining auto precharge) to  
select one location out of the memory array in the respective bank. A10 is sampled during a  
PRECHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank  
selected by BA0, BA1 (A10 LOW). The address inputs also provide the op-code during a LOAD  
MODE REGISTER command.  
A0-A11  
Input  
DQ  
NC  
I/O  
Data Input/Output : Data bus  
-
No Connect  
VDDQ  
VSSQ  
VDD  
VSS  
Supply  
Supply  
Supply  
Supply  
DQ Power: Provide isolated power to DQs for improved noise immunity.  
DQ Ground: Provide isolated ground to DQs for improved noise immunity.  
Power Supply: Voltage dependant on option.  
Ground.  
5
Rev. 0.5, May. ‘07  
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