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CMS4A16LAF 参数 Datasheet PDF下载

CMS4A16LAF图片预览
型号: CMS4A16LAF
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 )低功耗SDRAM [128M(8Mx16) Low Power SDRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 616 K
品牌: FIDELIX [ FIDELIX ]
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CMS4A16LAx–75Ex  
T0  
T1  
T2  
T3  
CLK  
Command  
Write  
NOP  
NOP  
NOP  
Bank  
Col n  
Address  
DQ  
Din  
n
Din  
n+1  
Figure 15. Write Burst - Burst length of 2  
T0  
T1  
T2  
CLK  
Command  
Write  
NOP  
Write  
Bank  
Col n  
Bank  
Col b  
Address  
DQ  
Din  
n
Din  
n+1  
Din  
b
Figure 16. Write to Write - Transition from a burst of 2 to a single write  
Data for a fixed-length WRITE burst a full-page WRITE burst  
may be followed by, or truncated with, a PRECHARGE com-  
mand to the same bank.The PRECHARGE command should  
be issued tWR after the clock edge at which the last desired  
input data element is registered. The auto precharge mode  
requires a tWR of at least one clock plus time, regardless of  
frequency. In addition, when truncating a WRITE burst, the  
DQM signal must be used to mask input data for the clock edge  
prior to, and the clock edge coincident with, the PRECHARGE  
command. An example is shown in Figure 19.  
Data n + 1 is either the last of a burst of two or the last desired  
of a longer burst. Following the PRECHARGE command, a  
subsequent command to the same bank cannot be issued until  
t
RP is met.  
32  
Rev. 0.5, May. ‘07  
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