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CMS4A16LAF 参数 Datasheet PDF下载

CMS4A16LAF图片预览
型号: CMS4A16LAF
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 )低功耗SDRAM [128M(8Mx16) Low Power SDRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 616 K
品牌: FIDELIX [ FIDELIX ]
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CMS4A16LAx–75Ex  
either enabled or disabled for that access. If auto precharge is  
enabled, the row being accessed is precharged at the com-  
pletion of the burst. During WRITE bursts, the first valid data-in  
element will be registered coincident with the WRITE command.  
Subsequent data elements will be registered on each  
successive positive clock edge. Upon completion of a fixed-  
length burst, assuming no other commands have been initiated,  
the DQs will remain High-Z and any additional input data will be  
ignored (see Figure 15.). A full-page burst will continue until  
terminated. (wrap around at the end of the page) An example is  
shown in Figure 16. . Data n + 1 is either the last of a burst of  
two or the last desired of a longer burst.  
A WRITE command can be initiated on any clock cycle fol-  
lowing a previous WRITE command. Full-speed random write  
accesses within a page can be performed to the same bank,  
as shown in Figure 17. , or each subsequent WRITE may be  
performed to a different bank.  
Write Command  
CLK  
CKE  
High  
/CS  
/RAS  
/CAS  
/WE  
Column  
Address  
A0-A8  
A9, A11  
Enable Auto Precharge  
Disable Auto Precharge  
A10  
Bank  
BA0, 1  
Address  
Don’t Care  
Figure 14. Write Command  
31  
Rev. 0.5, May. ‘07  
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