Typical Electrical Characteristics (continued)
1.1
10
ID = 250µA
VGS =0V
3
1
1.05
1
0.3
0.1
T
= 125°C
J
25°C
0.95
0.9
-55°C
0.03
0.01
0.003
0.001
0.85
-50
-25
0
25
50
75
100
125
150
0.2
0.4
V
0.6
0.8
1
1.2
1.4
T
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
14
400
200
100
50
ID = 1.3A
VDS = 10V
40V
20V
C
iss
C
12
10
8
oss
6
20
10
4
C
rss
f = 1 MHz
VGS = 0V
2
0
0.1
0.2
0.5
1
2
5
10
20
50
0
1
2
3
4
5
6
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
RGEN
INVERTED
DUT
G
90%
V
50%
50%
IN
S
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDS9959.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
