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NDS9959 参数 Datasheet PDF下载

NDS9959图片预览
型号: NDS9959
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 10 页 / 341 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Electrical Characteristics  
12  
2.4  
2
VGS =10V  
9.0  
10  
VGS = 6V  
7.0V  
8.0  
8
8.0V  
9.0V  
7.0  
6
4
2
0
1.6  
1.2  
0.8  
10V  
6.0  
5.0  
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10  
12  
V
, DRAIN-SOURCE VOLTAGE (V)  
I
, DRAIN CURRENT (A)  
D
DS  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Gate Voltage and Drain Current.  
2
5
4
3
2
1
0
ID = 1.5A  
VGS =10V  
1.8  
1.6  
1.4  
1.2  
1
VGS =10 V  
T
= 125°C  
J
0.8  
0.6  
0.4  
25°C  
-55°C  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0
2
4
I
6
8
10  
12  
, JUNCTION TEMPERATURE (°C)  
J
, DRAIN CURRENT (A)  
D
Figure 3. On-Resistance Variation  
with Temperature.  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature.  
12  
10  
8
1.2  
1.1  
1
T
= -55°C  
VDS = 10V  
J
25  
V DS = V  
GS  
125  
I D = 250µA  
6
0.9  
0.8  
0.7  
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
T
, JUNCTION TEMPERATURE (°C)  
V
, GATE TO SOURCE VOLTAGE (V)  
J
GS  
Figure 5. Transfer Characteristics.  
Figure 6. Gate Threshold Variation with  
Temperature.  
NDS9959.SAM  
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