Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 40 V, VGS = 0 V
50
V
Zero Gate Voltage Drain Current
2
µA
µA
nA
nA
25
TJ= 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.5 A
VGS = 5 V, ID = 0.6 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, ID = 2.0 A
2
3
4
V
Static Drain-Source On-Resistance
0.3
0.5
RDS(ON)
W
ID(on)
gFS
On-State Drain Current
8
1
A
S
Forward Transconductance
2.7
DYNAMIC CHARACTERISTICS
Input Capacitance
152
50
250
85
pF
pF
pF
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
12
25
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = 30 V, ID = 0.6 A,
VGS = 10 V, RL = 50 W,
RGEN = 6 W
4
8
40
70
ns
ns
9
100
70
ns
11
4.3
1.1
1.5
ns
Qg
Qgs
Qgd
VDS = 25 V,
ID = 1.3 A, VGS = 10 V
15
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
NDS9959.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
