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NDS9959 参数 Datasheet PDF下载

NDS9959图片预览
型号: NDS9959
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 10 页 / 341 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Electrical Characteristics (TA = 25°C unless otherwise noted)  
Symbol Parameter Conditions  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Min  
Typ  
Max  
Units  
IS  
Maximum Continuos Drain-Source Diode Forward Current  
1.8  
1.2  
A
V
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
0.84  
VSD  
trr  
VGS = 0 V, IS = 1.25 A (Note 2)  
VGS = 0V, IF = 1.25 A, dIF/dt = 100 A/µs  
100  
ns  
Notes:  
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by  
design while RqCA is determined by the user's board design.  
T - T  
T - T  
=
=
(t)  
R
qJ  
= I2 (t) ´ RDS  
J
A
J
A
( )  
PD t  
(
)
T
J
ON  
D
R
+R (t)  
C qCA  
qJ  
A
Typical RqJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:  
a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper.  
b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper.  
c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper.  
1a  
1b  
1c  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.  
NDS9959.SAM  
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