Typical Electrical Characteristics
(continued)
, TRANSCONDUCTANCE (SIEMENS)
5
20
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
4
10
1m
s
IT
LIM
N)
(O
S
RD
T J = -55°C
25°C
5
3
1
0.3
0.1
0.03
0.01
0.1
10m
100
1s
10s
ms
s
3
2
125°C
1
g
V
GS
= 4.5V
SINGLE PULSE
R
JA
=See Note1b
θ
T = 25°C
A
0.2
0.5
V
DS
DC
FS
0
0
1
2
3
I , DRAIN CURRENT (A)
D
4
5
1
2
5
10
20 30
50
, DRAI N-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 14. Maximum Safe Operating Area.
STEADY-STATE POWER DISSIPATION (W)
1
I , STEADY-STATE DRAIN CURRENT (A)
1.6
0.8
1.4
0.6
1b
1a
1.2
1a
0.4
1b
4.5"x5" FR-4 Board
T
A
= 2 5 C
Still Air
V
G S
= 4 . 5 V
o
1
0.2
4.5"x5" FR-4 Board
T
A
= 25
o
C
Still Air
D
0
0.8
0
0.1
0.2
0.3
2oz COPPER MOUNTING PAD AREA (in
2
)
0.4
0
0.1
0.2
0.3
2oz COPPER MOUNTING PAD AREA (in
2
)
0.4
Figue 15. SuperSOT
TM _
3 Maximum
Steady-State
Power Dissipation versus Copper Mounting Pad Area.
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area
.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
R
θJA
(t) = r(t) * R
θJA
R
θJA
= See Note 1b
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
NDS351AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
