Typical Electrical Characteristics
5
1.8
V
GS
=10V
I
D
, DRAIN-SOURCE CURRENT (A)
4
6.0
R
DS(on
)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0
4.5
4.0
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
= 3.5V
3
3.5
2
4.0
4.5
5.0
6.0
7.0
10
3.0
1
0
0
V
DS
1
2
, DRAIN-SOURCE VOLTAGE (V)
3
0
1
2
I
D
, DRAIN CURRENT (A)
3
4
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
1.8
1.8
DRAIN-SOURCE ON-RESISTANCE
I
D
= 1.2A
1.6
1.4
1.2
1
0.8
0.6
0.4
DRAIN-SOURCE ON-RESISTANCE
1.6
V
GS
= 4.5 V
R
DS(ON)
, NORMALIZED
V
GS
= 4.5V
TJ = 125°C
1.4
R
DS(on)
, NORMALIZED
1.2
25°C
-55°C
1
0.8
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
1
2
I
D
, DRAIN CURRENT (A)
3
4
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
5
V
DS
= 5.0V
4
25°C
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
T = -55°C
J
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
I
D
, DRAIN CURRENT (A)
125°C
3
V
DS
= V
GS
I
D
= 250µA
2
1
0
0.5
1
1.5
V
GS
2
2.5
3
3.5
4
4.5
5
-25
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature
.
NDS351AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
