Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
=125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 1.2 A
T
J
=125°C
V
GS
= 10 V, I
D
= 1.4 A
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 1.2 A,
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
3.5
1.8
0.8
0.5
1.7
1.3
0.19
0.28
0.125
30
1
10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
2
1.5
0.25
0.37
0.16
A
S
V
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
125
100
90
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 50
Ω
6
15
14
18
15
30
30
40
2.7
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 1.2 A,
V
GS
= 4.5 V
1.9
0.5
0.9
NDS351AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
