Typical Electrical Characteristics
(continued)
, TRANSCONDUCTANCE (SIEMENS)
4
20
V
DS
=- 5V
3
T = -55°C
J
-I
D
, DRAIN CURRENT (A)
10
5
2
1
0.5
T
IMI
)L
ON
S(
RD
1m
10m
s
100
ms
s
25°C
125°C
2
1s
0.1
0.03
1
g
FS
V
GS
= -2.7V
SINGLE PULSE
R
θJA
= See Note 1b
T
A
= 25°C
0.2
10s
D
C
0
0
-0.5
-1
-1.5
-2
I
D
, DRAIN CURRENT (A)
-2.5
-3
0.01
0.1
0.5
1
2
5
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
20
50
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 14. Maximum Safe Operating Area
.
STEADY-STATE POWER DISSIPATION (W)
0.8
-I
D
, STEADY-STATE DRAIN CURRENT (A)
1
1.4
1.2
0.6
1b
1a
1
1b
0.4
1a
0.8
0.2
4.5"x5" FR-4 Board
T
A
= 25
o
C
Still Air
4.5"x5" FR-4 Board
T
A
= 25
o
C
Still Air
V
GS
= -2.7V
0
0
0.1
0.2
0.3
2oz COPPER MOUNTING PAD AREA (in
2
)
0.4
0.6
0
0.1
0.2
0.3
2
2oz COPPER MOUNTING PAD AREA (in )
0.4
Figue 15. SuperSOT
TM _
3 Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area
.
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
R
θJA
(t) = r(t) * R
θJA
R
θJA
= See Note 1b
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
NDS332PRev. E
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
