Typical Electrical Characteristics
(continued)
1.12
1
DRAIN-SOURCE BREAKDOWN VOLTAGE
V
GS
=0V
I
D
= -250µA
1.08
-I , REVERSE DRAIN CURRENT (A)
BV
DSS
, NORMALIZED
0.1
0.05
1.04
TJ = 125°C
0.01
25°C
-55°C
1
0.96
0.001
0.92
-50
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
S
0.0001
0
0.2
0.4
0.6
0.8
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode ForwardVoltageVariation with
Source Current and Temperature
.
500
300
CAPACITANCE (pF)
200
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -1A
V
DS
= -5V
-10V
-15V
4
Ciss
Coss
3
100
2
50
30
20
0.1
f = 1 MHz
V
GS
= 0V
0.2
-V
DS
Crss
1
0.5
1
2
5
, DRAIN TO SOURCE VOLTAGE (V)
10
20
0
0
1
2
3
Q
g
, GATE CHARGE (nC)
4
5
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
V
DD
V
IN
D
t
on
t
d(on)
t
r
90%
t
off
t
d(off)
90%
t
f
R
L
V
OUT
DUT
V
GS
V
OUT
10%
10%
90%
R
GEN
G
V
IN
S
10%
50%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDS332PRev. E
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
