Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55°C
I
GSS
I
GSS
Gate - Body Leakage
Current
Gate - Body Leakage
Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-20
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
T
J
=125°C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -1 A
T
J
=125°C
V
GS
= -4.5 V, I
D
= -1.1 A
I
D(ON)
On-State Drain Current
V
GS
= -2.7 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
g
F
S
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
-1.5
-2.5
2.2
-0.4
-0.3
-0.6
-0.45
0.35
0.5
0.26
-1
-0.8
0.41
0.74
0.3
A
V
Ω
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -5 V, I
D
= -1 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
195
105
40
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V
V
DD
= -6 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
8
30
25
27
3.7
0.5
0.9
15
45
45
45
5
ns
ns
ns
ns
nC
nC
nC
NDS332P Rev. E
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
