Typical Electrical Characteristics (continued)
2.2
1.12
1.08
1.04
1
VDS = VGS
ID = 250µA
2
1.8
1.6
1.4
1.2
1
I D = 10mA
1mA
250uA
0.96
0.92
0.8
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T
, JUNCTION TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
J
J
Figure 7. Gate Threshold Variation with
Temperature
Figure 8. Breakdown Voltage Variation with
Temperature.
2500
2000
10
ID = 25A
VDS = 5V
C
10
iss
8
20
1000
500
6
C
oss
4
2
0
300
200
C
rss
f = 1 MHz
VGS = 0V
100
0.1
0.2
0.5
1
2
5
10
20 30
0
5
10
Q
15
20
25
30
V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
r
t
tf
t d(on)
90%
90%
RL
VIN
D
VOUT
Output, V
Input, V
out
10%
90%
10%
VGS
Inverted
RGEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
NDP603AL.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
