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NDP603AL 参数 Datasheet PDF下载

NDP603AL图片预览
型号: NDP603AL
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平增强模式场效应晶体管 [N-Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 5 页 / 68 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号NDP603AL的Datasheet PDF文件第1页浏览型号NDP603AL的Datasheet PDF文件第2页浏览型号NDP603AL的Datasheet PDF文件第4页浏览型号NDP603AL的Datasheet PDF文件第5页  
Typical Electrical Characteristics  
80  
3
2.5  
2
VGS =10V  
8.0  
7.0  
VGS = 4V  
6.0  
4.5  
60  
5.0  
5.0  
40  
6.0  
4.5  
1.5  
1
7.0  
8.0  
10  
4.0  
20  
0
3.0  
0.5  
0
20  
40  
, DRAIN CURRENT (A)  
60  
80  
0
1
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)  
I
D
DS  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with Gate Voltage  
and Drain Current.  
1.6  
2.5  
ID = 25A  
VGS =10V  
VGS = 10V  
1.4  
1.2  
1
2
T
= 125°C  
J
1.5  
1
25°C  
0.8  
0.6  
-55°C  
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
, DRAIN CURRENT (A)  
60  
80  
T
, JUNCTION TEMPERATURE (°C)  
I
D
J
Figure 3. On-Resistance Variation  
with Temperature.  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature.  
40  
30  
20  
10  
0
0.05  
T
= -55°C  
VDS = 10V  
VDS = 10V  
J
25  
125  
0.04  
0.03  
0.02  
0.01  
0
T
= 125°C  
J
25°C  
-55°C  
1
2
3
4
5
6
0.5  
1
1.5  
2
2.5  
V
, GATE TO SOURCE VOLTAGE (V)  
V
, GATE TO SOURCE VOLTAGE (V)  
GS  
GS  
Figure 6.  
Sub-threshold Drain Current Variation  
Figure 5.  
Drain Current Variation with Gate  
with Gate Voltage and Temperature.  
Voltage and Temperature.  
NDP603AL.SAM  
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