IRF640N/IRF640NS/IRF640NL
Typical Characteristic
(Continued)
1.3
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.2
1000
10000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
1.1
C, CAPACITANCE (pF)
1.0
C
OSS
≅
C
DS
+ C
GD
100
0.9
C
RSS
= C
GD
0.8
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100 200
Figure 11. Normalized Drain To Source
Breakdown Voltage vs Junction Temperature
10
V
DD
= 100V
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
Figure 12. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
I
D
= 22A
I
D
= 5A
0
0
10
20
30
40
50
60
70
Q
g
, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
0V
R
G
-
BV
DSS
V
DS
V
DD
+
V
DD
I
AS
0.01Ω
0
t
AV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
