IRF640N/IRF640NS/IRF640NL
Typical Characteristic
(Continued)
200
100
I
AS
, AVALANCHE CURRENT (A)
100µs
I
D
, DRAIN CURRENT (A)
100
1ms
10
10ms
STARTING T
J
= 150
o
C
10
STARTING T
J
= 25
o
C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
1
10
100
300
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
1
0.001
0.01
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
40
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D,
DRAIN CURRENT (A)
30
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 5V
30
V
GS
=4.5V
20
20
T
J
= -55
o
C
T
J
= 175
o
C
10
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
0
1
2
3
4
5
6
T
J
= 25
o
C
0
2
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Charicteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 10V, I
D
= 22A
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Figure 8. Saturation Charactoristics
1.2
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
0.8
0.6
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 9. Normalized Drain To Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
