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IRF640NS 参数 Datasheet PDF下载

IRF640NS图片预览
型号: IRF640NS
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET 200V , 18A , 0.15ohm [N-Channel Power MOSFETs 200V, 18A, 0.15ohm]
分类和应用:
文件页数/大小: 11 页 / 157 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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IRF640N/IRF640NS/IRF640NL
SABER Electrical Model
REV 10 October 2000
template IRF640N n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 1.2e-12, rs=5.5e-3, trs1=1e-5, trs2=8e-6, cjo = 12.5e-10, m=0.42, tt = 1e-7, xti = 5.5)
dp..model dbreakmod = (rs=2.5, trs1=1e-3, trs2=-8.9e-6)
dp..model dplcapmod = (cjo = 2.5e-9, isl =10e-30, nl=10, m = 0.9)
m..model mmedmod = (type=_n, vto = 3.14, kp = 5, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.68, kp = 100, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.76, kp = 0.05, is = 1e-30, tox = 1, rs = 0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8.5, voff = -1)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -1, voff = -8.5)
LDRAIN
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.1, voff = 0.2)
DPLCAP 5
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.2, voff = -0.1)
10
DRAIN
2
c.ca n12 n8 = 3.6e-9
c.cb n15 n14 = 3.5e-9
c.cin n6 n8 = 2e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
ESG
RSLC1
51
RSLC2
ISCL
RLDRAIN
-
6
8
+
LGATE
EVTHRES
+ 19
-
8
6
50
RDRAIN
21
16
DBREAK
11
MWEAK
MMED
EBREAK
+
17
18
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.78e-9
l.lsource n3 n7 = 3.92e-9
GATE
1
RLGATE
EVTEMP
RGATE + 18
-
22
9
20
DBODY
MSTRO
CIN
8
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
S1A
S2A
-
LSOURCE
7
RLSOURCE
SOURCE
3
RSOURCE
RBREAK
17
18
RVTEMP
19
IT
res.rbreak n17 n18 = 1, tc1 = 1.52e-3, tc2 = -2e-7
12
15
14
13
res.rdrain n50 n16 = 83.5e-3, tc1 = 9.8e-3, tc2 = 2.6e-5
13
8
res.rgate n9 n20 = 7.6e-1
S1B
S2B
res.rldrain n2 n5 = 10
13
res.rlgate n1 n9 = 57.8
CB
CA
res.rlsource n3 n7 = 39.2
+ 14
+
res.rslc1 n5 n51 = 1e-6, tc1 = 3e-3, tc2 = 1e-6
6
5
EGS 8
EDS 8
res.rslc2 n5 n50 = 1e3
-
-
res.rsource n8 n7 = 10e-3, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.8e-3, tc2 = 1.7e-6
res.rvthres n22 n8 = 1, tc1 = -2.3e-3, tc2 = -1.3e-5
spe.ebreak n11 n7 n17 n18 = 225
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/38))** 2.5))
}
}
-
VBAT
+
8
RVTHRES
22
©2002 Fairchild Semiconductor Corporation
Rev. B