IRF640N/IRF640NS/IRF640NL
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
µ
A, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V
V
GS
=
±
20V
T
C
= 150
o
200
-
-
-
-
-
-
-
-
25
250
±
100
V
µ
A
nA
On Characteristics
V
GS(TH)
r
DS(ON)
g
fs
Gate to Source Threshold Voltage
Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
µ
A
I
D
= 11A, V
GS
= 10V
V
DS
= 50V, I
D
= 11A (Note 2)
2
-
6.8
-
0.102
-
4
0.15
-
V
Ω
S
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
(V
GS
= 10V)
-
-
V
DD
= 100V, I
D
= 11A
V
GS
= 10V, R
GS
= 2.5
Ω
-
-
-
-
-
10
19
23
5.5
-
44
-
-
-
-
46
ns
ns
ns
ns
ns
ns
V
GS
= 0V to 20V
V
GS
= 0V to 10V V =100V
DD
V
GS
= 0V to 2V I
D
= 22A
I
g
= 1.0mA
-
-
-
-
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
2200
400
120
117
64
5
9
24
-
-
-
152
83
7
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 11A
I
SD
= 11A, dI
SD
/dt = 100A/
µ
s
I
SD
= 11A, dI
SD
/dt = 100A/
µ
s
-
-
-
-
-
-
1.3
251
1394
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 4.2mH, I
AS
= 11A.
2:
Pulse width
≤
400
µ
s; duty cycle
≤
2%.
©2002 Fairchild Semiconductor Corporation
Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
