Typical Characteristic (Continued)
200
100
100
100µs
1ms
o
10
1
STARTING T = 25 C
o
J
STARTING T = 150 C
J
10
10ms
OPERATION IN THIS
AREA MAY BE
If R = 0
= (L)(I )/(1.3*RATED BV
SINGLE PULSE
t
AV
- V
DD
)
AS
DSS
T
= MAX RATED
J
LIMITED BY r
DS(ON)
o
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
T
= 25 C
C
t
AV
- V ) +1]
DD
AS
DSS
0.1
1
1
10
100
300
10
0.001
0.01
t ,TIME IN AVALANCHE (ms)
AV
0.1
1
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
40
40
PULSE DURATION = 80µs
V
= 10V
= 5V
GS
DUTY CYCLE = 0.5% MAX
V
V
= 15V
GS
DD
30
20
10
0
30
20
10
0
V
=4.5V
GS
o
T
= -55 C
J
o
T
= 175 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
J
o
T
= 25 C
C
0
1
2
3
4
5
6
2
3
4
5
6
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
Figure 7. Transfer Charicteristics
Figure 8. Saturation Charactoristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.2
V
= V , I = 250µA
DS D
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
GS
1.0
0.8
0.6
V
= 10V, I = 22A
D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 9. Normalized Drain To Source On
Resistance vs Junction Temperature
Figure 10. Normalized GateThreshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
