IRF640N/IRF640NS/IRF640NL
January 2002
IRF640N/IRF640NS/IRF640NL
N-Channel Power MOSFETs
200V, 18A, 0.15
Ω
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.102
Ω
(Typ)
,
V
GS
=
10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
• Peak Current vs Pulse Width Curve
• UIS Rateing Curve
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
D
GATE
SOURCE
DRAIN
(FLANGE)
G
TO-263
TO-262
TO-220
S
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Parameter
Ratings
200
±
20
18
13
Figure 4
247
150
1.0
-55 to 175
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
I
D
E
AS
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.0
62
40
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
640N
640N
640N
Device
IRF640NS
IRF640NL
IRF640N
Package
TO-263AB
TO-262AA
TO-220AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50
50
©2002 Fairchild Semiconductor Corporation
Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
