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HUFA76429D3_NL 参数 Datasheet PDF下载

HUFA76429D3_NL图片预览
型号: HUFA76429D3_NL
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,]
分类和应用: 开关晶体管
文件页数/大小: 10 页 / 225 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUFA76429D3, HUFA76429D3S  
SABER Electrical Model  
REV 5 July 1999  
template HUFA76429d3 n2,n1,n3  
electrical n2,n1,n3  
{
var i iscl  
d..model dbodymod = (is = 1.25e-12, cjo = 1.68e-9, tt = 4.90e-8, xti = 4.35, m = 0.48)  
d..model dbreakmod = ()  
d..model dplcapmod = (cjo = 1.28e-9, is = 1e-30, n = 10, m = 0.8)  
m..model mmedmod = (type=_n, vto = 1.98, kp = 3.2, is = 1e-30, tox = 1)  
m..model mstrongmod = (type=_n, vto = 2.30, kp = 52, is = 1e-30, tox = 1)  
m..model mweakmod = (type=_n, vto = 1.72, kp = 0.08, is = 1e-30, tox = 1)  
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2.4)  
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.4, voff = -6.2)  
LDRAIN  
RLDRAIN  
RDBODY  
DPLCAP  
DRAIN  
2
5
10  
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.1, voff = 0.5)  
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.1)  
RSLC1  
51  
RDBREAK  
72  
DBREAK  
11  
c.ca n12 n8 = 2.03e-9  
c.cb n15 n14 = 2.03e-9  
c.cin n6 n8 = 1.39e-9  
RSLC2  
ISCL  
50  
-
d.dbody n7 n71 = model=dbodymod  
d.dbreak n72 n11 = model=dbreakmod  
d.dplcap n10 n5 = model=dplcapmod  
71  
RDRAIN  
6
8
ESG  
EVTHRES  
+
+
16  
21  
-
19  
8
MWEAK  
i.it n8 n17 = 1  
LGATE  
EVTEMP  
+
DBODY  
RGATE  
GATE  
1
6
-
18  
22  
EBREAK  
+
l.ldrain n2 n5 = 1e-9  
l.lgate n1 n9 = 5.42e-9  
l.lsource n3 n7 = 4.16e-9  
MMED  
9
20  
MSTRO  
8
17  
18  
-
RLGATE  
LSOURCE  
CIN  
SOURCE  
3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u  
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u  
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u  
7
RSOURCE  
RLSOURCE  
S1A  
S2A  
14  
res.rbreak n17 n18 = 1, tc1 = 1.15e-3, tc2 = -5.40e-7  
res.rdbody n71 n5 = 8.40e-3, tc1 = 2.05e-3, tc2 = 3.85e-6  
res.rdbreak n72 n5 = 1.68e-1, tc1 = 1.00e-3, tc2 = -1.00e-6  
res.rdrain n50 n16 = 9.10e-3, tc1 = 7.85e-3, tc2 = 1.95e-5  
res.rgate n9 n20 = 2.80  
res.rldrain n2 n5 = 10  
res.rlgate n1 n9 = 54.2  
res.rlsource n3 n7 = 41.6  
res.rslc1 n5 n51 = 1e-6, tc1 = 4.97e-3, tc2 = 5.05e-6  
res.rslc2 n5 n50 = 1e3  
RBREAK  
12  
15  
13  
17  
18  
8
13  
RVTEMP  
19  
S1B  
S2B  
13  
CB  
CA  
IT  
14  
-
+
+
VBAT  
6
8
5
8
EGS  
EDS  
+
-
-
8
22  
res.rsource n8 n7 = 6.5e-3, tc1 = 1.5e-3, tc2 = 1e-6  
res.rvtemp n18 n19 = 1, tc1 = -1.92e-3, tc2 = 9.50e-7  
res.rvthres n22 n8 = 1, tc1 = -1.85e-3, tc2 = -4.48e-6  
RVTHRES  
spe.ebreak n11 n7 n17 n18 = 68.10  
spe.eds n14 n8 n5 n8 = 1  
spe.egs n13 n8 n6 n8 = 1  
spe.esg n6 n10 n6 n8 = 1  
spe.evtemp n20 n6 n18 n22 = 1  
spe.evthres n6 n21 n19 n8 = 1  
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod  
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod  
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod  
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod  
v.vbat n22 n19 = dc=1  
equations {  
i (n51->n50) +=iscl  
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/117))** 3))  
}
}
©2001 Fairchild Semiconductor Corporation  
HUFA76429D3, HUFA76429D3S Rev. B