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HUFA76429D3_NL 参数 Datasheet PDF下载

HUFA76429D3_NL图片预览
型号: HUFA76429D3_NL
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,]
分类和应用: 开关晶体管
文件页数/大小: 10 页 / 225 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUFA76429D3, HUFA76429D3S  
PSPICE Electrical Model  
.SUBCKT HUFA76429D3 2 1 3 ;  
rev 5 July 1999  
CA 12 8 2.03e-9  
CB 15 14 2.03e-9  
CIN 6 8 1.39e-9  
LDRAIN  
DPLCAP  
DRAIN  
2
5
DBODY 7 5 DBODYMOD  
DBREAK 5 11 DBREAKMOD  
DPLCAP 10 5 DPLCAPMOD  
10  
RLDRAIN  
RSLC1  
51  
DBREAK  
+
RSLC2  
EBREAK 11 7 17 18 68.10  
EDS 14 8 5 8 1  
EGS 13 8 6 8 1  
ESG 6 10 6 8 1  
EVTHRES 6 21 19 8 1  
EVTEMP 20 6 18 22 1  
5
ESLC  
11  
51  
-
50  
+
-
17  
18  
-
DBODY  
RDRAIN  
6
8
EBREAK  
ESG  
EVTHRES  
+
+
16  
21  
-
19  
8
MWEAK  
IT 8 17 1  
LGATE  
EVTEMP  
+
RGATE  
GATE  
1
6
-
18  
22  
MMED  
LDRAIN 2 5 1e-9  
LGATE 1 9 5.42e-9  
LSOURCE 3 7 4.16e-9  
9
20  
MSTRO  
8
RLGATE  
LSOURCE  
CIN  
SOURCE  
3
MMED 16 6 8 8 MMEDMOD  
MSTRO 16 6 8 8 MSTROMOD  
MWEAK 16 21 8 8 MWEAKMOD  
7
RSOURCE  
RLSOURCE  
S1A  
S2A  
RBREAK 17 18 RBREAKMOD 1  
RDRAIN 50 16 RDRAINMOD 9.1e-3  
RGATE 9 20 2.80  
RBREAK  
12  
15  
13  
8
14  
13  
17  
18  
RLDRAIN 2 5 10  
RLGATE 1 9 54.2  
RLSOURCE 3 7 41.6  
RSLC1 5 51 RSLCMOD 1e-6  
RSLC2 5 50 1e3  
RSOURCE 8 7 RSOURCEMOD 6.5e-3  
RVTHRES 22 8 RVTHRESMOD 1  
RVTEMP 18 19 RVTEMPMOD 1  
RVTEMP  
19  
S1B  
S2B  
13  
CB  
CA  
IT  
14  
-
+
+
VBAT  
6
8
5
8
EGS  
EDS  
+
-
-
8
22  
RVTHRES  
S1A 6 12 13 8 S1AMOD  
S1B 13 12 13 8 S1BMOD  
S2A 6 15 14 13 S2AMOD  
S2B 13 15 14 13 S2BMOD  
VBAT 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*117),3))}  
.MODEL DBODYMOD D (IS = 1.25e-12 IKF = 10 RS = 8.40e-3 TRS1 = 2.05e-3 TRS2 = 3.85e-6 CJO = 1.68e-9 TT = 4.90e-8 M = 0.48 XTI = 4.35)  
.MODEL DBREAKMOD D (RS = 1.68e-1 TRS1 = 1e-3 TRS2 = -1e-6)  
.MODEL DPLCAPMOD D (CJO = 1.28e-9 IS = 1e-30 N = 10 M = 0.8)  
.MODEL MMEDMOD NMOS (VTO = 1.98 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.80)  
.MODEL MSTROMOD NMOS (VTO = 2.30 KP = 52 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)  
.MODEL MWEAKMOD NMOS (VTO = 1.72 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.0 RS = 0.1)  
.MODEL RBREAKMOD RES (TC1 = 1.15e-3 TC2 = -5.40e-7)  
.MODEL RDRAINMOD RES (TC1 = 7.85e-3 TC2 = 1.95e-5)  
.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.05e-6)  
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)  
.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -4.48e-6)  
.MODEL RVTEMPMOD RES (TC1 = -1.92e-3 TC2 = 9.50e-7)  
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2.4)  
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -6.2)  
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.1 VOFF= 0.5)  
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.1)  
.ENDS  
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.  
©2001 Fairchild Semiconductor Corporation  
HUFA76429D3, HUFA76429D3S Rev. B