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HUFA76429D3_NL 参数 Datasheet PDF下载

HUFA76429D3_NL图片预览
型号: HUFA76429D3_NL
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,]
分类和应用: 开关晶体管
文件页数/大小: 10 页 / 225 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUFA76429D3, HUFA76429D3S  
Typical Performance Curves  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
25  
V
= 10V  
GS  
20  
15  
10  
5
V
= 4.5V  
GS  
0
175  
0
25  
50  
75  
100  
150  
175  
25  
50  
75  
T , CASE TEMPERATURE ( C)  
100  
125  
150  
125  
o
o
T
, CASE TEMPERATURE ( C)  
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE  
TEMPERATURE  
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
CASE TEMPERATURE  
2
DUTY CYCLE - DESCENDING ORDER  
0.5  
1
0.2  
0.1  
0.05  
0.02  
0.01  
P
DM  
0.1  
t
1
t
2
NOTES:  
DUTY FACTOR: D = t /t  
1
2
SINGLE PULSE  
PEAK T = P  
x Z  
x R + T  
J
DM  
θJC  
θJC C  
0.01  
-5  
10  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
10  
10  
t, RECTANGULAR PULSE DURATION (s)  
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE  
600  
100  
o
T
= 25 C  
C
FOR TEMPERATURES  
o
ABOVE 25 C DERATE PEAK  
CURRENT AS FOLLOWS:  
V
= 10V  
GS  
175 - T  
150  
C
I = I  
25  
V
= 5V  
GS  
TRANSCONDUCTANCE  
MAY LIMIT CURRENT  
IN THIS REGION  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
10  
10  
10  
t, PULSE WIDTH (s)  
FIGURE 4. PEAK CURRENT CAPABILITY  
©2001 Fairchild Semiconductor Corporation  
HUFA76429D3, HUFA76429D3S Rev. B