HUFA76429D3, HUFA76429D3S
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
I
= 250µA, V
= 250µA, V
= 0V (Figure 12)
o
60
55
-
-
-
-
-
-
-
-
V
DSS
D
D
GS
GS
GS
GS
= 0V , T = -40 C (Figure 12)
C
V
I
V
V
V
= 55V, V
= 50V, V
= 0V
= 0V, T = 150 C
1
µA
µA
nA
DSS
DS
DS
GS
o
-
250
100
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
=
16V
-
GSS
V
V
= V , I = 250µA (Figure 11)
1
-
-
3
V
Ω
Ω
Ω
GS(TH)
GS
DS
D
GS
GS
GS
r
I
I
I
= 20A, V
= 20A, V
= 20A, V
= 10V (Figures 9, 10)
= 5V (Figure 9)
0.0205 0.023
DS(ON)
D
D
D
-
0.024
0.025
0.027
0.029
= 4.5V (Figure 9)
-
THERMAL SPECIFICATIONS
o
Thermal Resistance Junction to Case
R
R
TO-251 and TO-252
-
-
-
-
1.36
100
C/W
θJC
o
Thermal Resistance Junction to
Ambient
C/W
θJA
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 4.5V)
GS
t
V
V
= 30V, I = 20A
-
-
-
-
-
-
-
13
134
30
55
-
220
ns
ns
ns
ns
ns
ns
ON
DD
GS
D
= 4.5V, R
= 7.5Ω
GS
Turn-On Delay Time
Rise Time
t
-
d(ON)
(Figures 15, 21, 22)
t
-
r
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
f
Turn-Off Time
t
130
OFF
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 10V)
t
GS
V
V
= 30V, I = 20A
-
-
-
-
-
-
-
65
ns
ns
ns
ns
ns
ns
ON
DD
GS
D
= 10V,R
= 8.2Ω
GS
Turn-On Delay Time
Rise Time
t
7.7
36
60
56
-
-
d(ON)
(Figures 16, 21, 22)
t
-
r
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
f
Turn-Off Time
t
175
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 10V
= 0V to 5V
= 0V to 1V
V
= 30V,
-
-
-
-
-
38
21
46
25
1.6
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
DD
= 20A,
I
I
D
Gate Charge at 5V
Q
g(5)
= 1.0mA
g(REF)
Threshold Gate Charge
Q
1.3
3.8
9.7
g(TH)
(Figures 14, 19, 20)
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Q
gs
gd
Q
-
C
V
= 25V, V = 0V,
GS
-
-
-
1480
440
90
-
-
-
pF
pF
pF
ISS
DS
f = 1MHz
(Figure 13)
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
1.00
80
UNITS
V
Source to Drain Diode Voltage
V
I
I
I
I
= 20A
= 10A
-
-
-
-
-
-
-
-
SD
SD
SD
SD
SD
V
Reverse Recovery Time
t
= 20A, dI /dt = 100A/µs
SD
ns
rr
Reverse Recovered Charge
Q
= 20A, dI /dt = 100A/µs
SD
230
nC
RR
©2001 Fairchild Semiconductor Corporation
HUFA76429D3, HUFA76429D3S Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
