HUF75545P3, HUF75545S3, HUF75545S3S
Typical Performance Curves (Continued)
600
100
600
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
)
DD
AV
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV - V ) +1]
DSS DD
AS
DSS
t
AV
AS
100
100µs
o
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
1ms
10
1
LIMITED BY r
DS(ON)
o
STARTING T = 150 C
J
10ms
SINGLE PULSE
T
T
= MAX RATED
J
C
o
= 25 C
10
0.001
0.01
0.1
, TIME IN AVALANCHE (ms)
10
1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
t
V
AV
DS
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
150
150
V
= 7V
= 6V
V
= 20V
= 10V
GS
GS
PULSE DURATION = 80µs
V
V
DUTY CYCLE = 0.5% MAX
GS
GS
V
= 15V
DD
120
90
60
30
0
120
90
60
30
0
V
=5V
GS
o
T
= 175 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
o
J
T
= -55 C
J
o
T
= 25 C
C
2
3
4
5
6
0
1
2
3
4
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
2.5
1.2
V
= 10V, I = 75A
V
= V , I = 250µA
DS
PULSE DURATION = 80µs
GS
D
GS
D
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.8
1.0
0.5
0.6
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
