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HUF75545P3 参数 Datasheet PDF下载

HUF75545P3图片预览
型号: HUF75545P3
PDF下载: 下载PDF文件 查看货源
内容描述: 75A , 80V , 0.010 Ohm的N通道, UltraFET功率MOSFET [75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 266 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUF75545P3, HUF75545S3, HUF75545S3S  
PSPICE Electrical Model  
.SUBCKT HUF75545 2 1 3 ;  
rev 21 May 1999  
CA 12 8 5.4e-9  
CB 15 14 5.3e-9  
CIN 6 8 3.4e-9  
DBODY 7 5 DBODYMOD  
DBREAK 5 11 DBREAKMOD  
DPLCAP 10 5 DPLCAPMOD  
LDRAIN  
DPLCAP  
DRAIN  
2
5
10  
RLDRAIN  
RSLC1  
51  
EBREAK 11 7 17 18 87.4  
EDS 14 8 5 8 1  
EGS 13 8 6 8 1  
ESG 6 10 6 8 1  
EVTHRES 6 21 19 8 1  
EVTEMP 20 6 18 22 1  
DBREAK  
+
RSLC2  
5
ESLC  
11  
51  
-
50  
+
-
17  
18  
-
DBODY  
RDRAIN  
6
8
EBREAK  
ESG  
IT 8 17 1  
EVTHRES  
+
+
16  
21  
-
19  
8
MWEAK  
LDRAIN 2 5 1.0e-9  
LGATE 1 9 5.1e-9  
LSOURCE 3 7 4.4e-9  
LGATE  
EVTEMP  
+
RGATE  
GATE  
1
6
-
18  
22  
MMED  
9
20  
MSTRO  
8
RLGATE  
MMED 16 6 8 8 MMEDMOD  
MSTRO 16 6 8 8 MSTROMOD  
MWEAK 16 21 8 8 MWEAKMOD  
LSOURCE  
CIN  
SOURCE  
3
7
RSOURCE  
RBREAK 17 18 RBREAKMOD 1  
RDRAIN 50 16 RDRAINMOD 4.80e-3  
RGATE 9 20 0.87  
RLDRAIN 2 5 10  
RLSOURCE  
S1A  
S2A  
RBREAK  
12  
15  
13  
8
14  
13  
17  
18  
RLGATE 1 9 51  
RLSOURCE 3 7 44  
RSLC1 5 51 RSLCMOD 1e-6  
RSLC2 5 50 1e3  
RSOURCE 8 7 RSOURCEMOD 1.6e-3  
RVTHRES 22 8 RVTHRESMOD 1  
RVTEMP 18 19 RVTEMPMOD 1  
RVTEMP  
19  
-
S1B  
S2B  
13  
CB  
CA  
IT  
14  
+
+
VBAT  
6
8
5
8
EGS  
EDS  
+
-
-
8
S1A 6 12 13 8 S1AMOD  
S1B 13 12 13 8 S1BMOD  
S2A 6 15 14 13 S2AMOD  
S2B 13 15 14 13 S2BMOD  
22  
RVTHRES  
VBAT 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*320),3))}  
.MODEL DBODYMOD D (IS = 3.6e-12 RS = 2.1e-3 TRS1 = 1.5e-3 TRS2 = 5.1e-6 CJO = 4.6e-9 TT = 3.3e-8 M = 0.55)  
.MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = 0 TRS2 = -1.8e-5)  
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10 VJ = 1 M = 0.8)  
.MODEL MMEDMOD NMOS (VTO = 3.04 KP = 6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.87)  
.MODEL MSTROMOD NMOS (VTO = 3.5 KP = 105 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)  
.MODEL MWEAKMOD NMOS (VTO = 2.65 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.7 )  
.MODEL RBREAKMOD RES (TC1 = 1.3e-3 TC2 = -1e-6)  
.MODEL RDRAINMOD RES (TC1 = 9e-3 TC2 = 2.8e-5)  
.MODEL RSLCMOD RES (TC1 = 1.53e-3 TC2 = 2e-5)  
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)  
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5)  
.MODEL RVTEMPMOD RES (TC1 = -2.9e-3 TC2 = 5e-7)  
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -3)  
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -5)  
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= 0.5)  
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.5)  
.ENDS  
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.  
©2002 Fairchild Semiconductor Corporation  
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C